• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
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  • 优先权
    • 专利摘要:
    The invention relates to a device (50) for processing semiconductor substrates (60), the device comprising an enclosure (52) and at least one circuit (68, 70) for supplying a gas mixture into the chamber, enclosure containing at least one support (54), the support comprising a stack of trays (58) on which the semiconductor substrates rest, each tray having a substantially horizontal face on which at least one of the semiconductor substrates rests, in which at least one of the trays comprises at least one passage for the gaseous mixture between the substrate and the tray.
    公开号:FR3055468A1
    申请号:FR1658054
    申请日:2016-08-30
    公开日:2018-03-02
    发明作者:Guy Lazzarelli；Bachir Semmache；Stephanie Tran
    申请人:Semco Tech；
    IPC主号:
    专利说明:

    Field
    The present application relates to a device for processing parts, in particular semiconductor substrates intended for the manufacture of photovoltaic cells.
    Presentation of the prior art
    A method of manufacturing a photovoltaic cell may comprise a step of depositing an electrically insulating layer on one face of a semiconductor substrate, in particular a silicon substrate, for example according to a chemical vapor deposition process with assistance by plasma or PECVD (English acronym for Plasma Enhanced Chemical Vapor Deposition).
    FIG. 1 represents, partially and schematically, an example of a device 10 for processing semiconductor substrates adapted to the implementation of a PECVD method.
    The device 10 comprises an enclosure 12 in which a reduced pressure is maintained. The device 10 further comprises a support 13 on which are arranged trays 14. The trays can be introduced into the enclosure 12 or removed from the enclosure 12 by a door, not shown, for example provided at one end of the enclosure 12. Each tray 14, for example
    B15377 in graphite, can receive at least one semiconductor substrate 16. The semiconductor substrates 16 are arranged substantially vertically in the enclosure 12. Each plate 14 comprises at least one pin 17 to hold the substrate 16 substantially pressed against one face of the plate 14.
    The device 10 comprises reservoirs 18 of precursor gases and possibly of a neutral gas. The reservoirs 18 are connected to a control panel 20 suitable for mixing the precursor gases and possibly the neutral gas. The control panel 20 is connected to the enclosure 12 by a valve 22, which when open, allows the introduction of the gas mixture into the enclosure 12 by a supply nozzle 23. The device 10 comprises a pump vacuum 24 connected to the enclosure 12 by a valve 26 which, when open, allows the suction of the gas mixture present in the enclosure 12 by a suction nozzle 25.
    The device 10 further comprises heating elements 28 surrounding the enclosure 12 and making it possible to control the temperature of the plates 14 and of the gas mixture in the enclosure 12. The device 10 further comprises a generator 30 of an alternating voltage which is electrically connected to the plates 14 in the enclosure 12.
    The PECVD process is a dry deposition technique, that is to say from a gas phase. It uses the precursor gases which are injected into the enclosure 12 and the deposit results from the decomposition of these gases by a chemical reaction on the surface of the substrates 16. In the PECVD process, the chemical reaction is assisted by a radiofrequency electrical discharge ( RF) which ionizes the gases and forms a plasma. Each plate 14 acts as a thermal conductor and radiofrequency contact with the associated semiconductor substrate 16. The plates 14 are connected to the generator 30 so as to form an alternation of cathodes and anodes and a plasma is generated between each pair of adjacent plates 14. The precursor gases will decompose to form a thin layer deposit on the face of
    B15377 each substrate 16 opposite the face in contact with the plate 14.
    The processing device 10 has several drawbacks.
    A drawback is that the composition of the gas mixture in the vicinity of each semiconductor substrate 16 is not homogeneous in the enclosure 12. In fact, the further one moves away from the supply nozzle 23, the more the proportion of the precursor gases having already reacted increases. It may then be difficult to obtain deposits of the same thickness and of the same composition for each semiconductor substrate 16. It may then be necessary to provide a variable spacing between the plates 14 to compensate for the inhomogeneity of the gas mixture in the enclosure 12 This can make the design of the support 13 and / or the positioning of the plates 14 on the support 13 complex.
    Another disadvantage is that the semiconductor substrates 16 being arranged vertically in the enclosure 12, they can undergo under their own weight mechanical stresses which are not desirable.
    Another drawback is that there may not be a deposit on the areas of the semiconductor substrates 16 obscured by the pins 17. The absence of a deposit can make the subsequent stages of the photovoltaic cell manufacturing process complex. In addition, the zones of the semiconductor substrates 16 where the deposit is absent can form fragile zones at the level of which breakdown phenomena of the photovoltaic cells can occur.
    summary
    An object of an embodiment aims to overcome all or part of the drawbacks of the processing devices described above.
    Another object of an embodiment is to improve the homogeneity of the gas mixture within the enclosure of the treatment device.
    B15377
    Another object of an embodiment is to reduce the mechanical stresses undergone by the semiconductor substrates during the treatment.
    Another object of an embodiment is to obtain the deposition of a layer over the entire face to be treated of each semiconductor substrate.
    Thus, one embodiment provides a device for treating semiconductor substrates, the device comprising an enclosure and at least one circuit for supplying a gaseous mixture into the enclosure, the enclosure containing at least one support, the support comprising a stack of plates on which the semiconductor substrates rest, each plate having a substantially horizontal face on which rests at least one of the semiconductor substrates. At least one of the plates comprises at least one passage for the gas mixture between the substrate and the plate.
    According to one embodiment, said plate comprises first parallel grooves extending in the plate from said face and second parallel grooves extending in the plate from said face and inclined relative to the first grooves.
    According to one embodiment, said plate comprises studs projecting from said face on which the semiconductor substrate rests.
    According to one embodiment, at least two semiconductor substrates rest on said plate, the face of said plate comprising locations on which the substrates rest and a rib projecting from the face and at least partially separating the two locations.
    According to one embodiment, the face of said plate comprises a recess under the substrate and a channel open only at its ends connecting the recess to one of the lateral edges of said plate.
    According to one embodiment, the device comprises a circuit for supplying the gaseous mixture into the enclosure, the circuit
    B15377 comprising at least two pipes arranged in the enclosure on either side of the support, each pipe comprising openings for the supply of the gaseous mixture into the enclosure.
    According to one embodiment, the pipes extend vertically.
    According to one embodiment, the diameters of the openings of each pipe increase from one end to the other of the pipe.
    According to one embodiment, the openings of one of the pipes are offset in the vertical direction relative to the openings of the other pipe.
    According to one embodiment, the stack comprises a succession of N trays, the openings of one of the pipes being located at the level of the trays of even rank and the openings of the other pipe being located at the level of the trays of odd rank .
    According to one embodiment, the plates are divided into first successive plates and into second successive plates, the device further comprising a first circuit for supplying the gaseous mixture into the enclosure and a second circuit for supplying the gas mixture in the enclosure, the first circuit comprising at least two first lines arranged in the enclosure on either side of the first plates and the second circuit comprising at least two second lines arranged in the enclosure on either side of the second plates , each first and second pipe comprising openings for supplying the gaseous mixture into the enclosure.
    According to one embodiment, the device comprises a first generator of a first alternating voltage connected to the first plates and a second generator of a second alternating voltage connected to the second plates.
    According to one embodiment, the device comprises a vacuum pump connected to the enclosure.
    B15377
    According to one embodiment, the device is intended for the treatment of semiconductor substrates intended for the manufacture of photovoltaic cells.
    Brief description of the drawings
    These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments made without implied limitation in relation to the attached figures, among which:
    Figure 1, described above, shows, partially and schematically, an example of a PECVD processing device for semiconductor substrates;
    FIG. 2 represents, partially and schematically, an embodiment of a device for PECVD treatment of semiconductor substrates;
    Figure 3 is an enlarged, partial and schematic view of a supply line of a gas mixture of the treatment device shown in Figure 2;
    Figures 4A, 4B and 4C are respectively a top view, a side view and a detail view of an embodiment of a tray of the processing device shown in Figure 2;
    FIGS. 5A, 5B, 5C and 5D are respectively a perspective view, a top view, a side view and a detail view of the side view of another embodiment of a tray of the treatment device shown in Figure 2;
    FIGS. 6A, 6B, 6C, 6D, 6E and 6F are respectively a perspective view, a top view, a side view, a detail view of the side view, a side view with section and a view of detail of the side view with section of another embodiment of a tray of the processing device shown in Figure 2; and FIGS. 7A, 7B, 7C, 7D, 7E and 7F are respectively a perspective view, a top view, a side view, a detail view of the side view, a side view with section and a view detail of side view with section of another mode
    B15377 realization of a tray of the treatment device shown in FIG. 2.
    detailed description
    The same elements have been designated by the same references to the different figures and, moreover, the various figures are not drawn to scale. For the sake of clarity, only the elements which are useful for understanding the embodiments described have been shown and are detailed. In particular, the means for generating a plasma are well known to those skilled in the art and are not described in detail.
    In the following description, when reference is made to qualifiers of relative position, such as the terms above, below, upper, lower, etc., reference is made to the vertical direction. Unless specified otherwise, the expressions approximately, appreciably, and of the order of mean to 10%, preferably to 5%.
    FIG. 2 shows, partially and schematically, an embodiment of a device 50 for processing parts adapted to the implementation of a PECVD method.
    The device 50 comprises a sealed enclosure 52, for example made of stainless steel, oriented vertically, in which a reduced pressure can be maintained. The enclosure 52 may have a substantially cylindrical shape with a vertical axis. The device 50 further comprises a support 54, also called a nacelle, for semiconductor substrates 60, the support 54 comprising an alternation of plates 58 made of an electrically conductive material and spacers 59 made of an electrically insulating material. The plates 58 of each pair of adjacent plates 58 are separated by one of the spacers 59. The spacers 59 are for example made of ceramic. Each plate 58, for example made of graphite, can receive at least one semiconductor substrate 60, preferably at least two semiconductor substrates, for example four semiconductor substrates. The semiconductor substrates 60 are arranged
    B15377 substantially horizontally on the plates 58. According to one embodiment, the spacing between the plates 58 is substantially constant, for example between 10 mm and 20 mm. The number of plates 58 can be between 5 and 100. The maximum thickness of each plate 58 is between 1 mm and 10 mm, for example of the order of 5 mm. Each semiconductor substrate 60 can have a thickness of between 100 μm and 200 μm. Each substrate 60 may, in top view, have a substantially square shape whose side is between 100 mm and 220 mm. As a variant, each substrate 60 may, in top view, have a square or substantially square shape (generally known by the expressions full square or pseudo-square), rectangular or circular.
    The device 50 comprises means, not shown, for moving the support 54, in particular for introducing it into the enclosure 52 or for removing it from the enclosure 52. The displacement means can comprise a bracket which can be connected to the top of the support 54. As a variant, the displacement means may comprise an articulated arm. The enclosure 52 comprises a door, for example situated at the top or at the base of the enclosure 52, which when open allows the introduction or the withdrawal of the support 54 in the enclosure 52. As a variant, the door can be connected to the support 54 and can close the enclosure 52 hermetically when the support 54 is introduced into the enclosure 52.
    The device 50 comprises reservoirs 62 of precursor gases and optionally of at least one neutral gas and optionally a vaporization and vapor regulation system for supplying a precursor gas from a reservoir of a liquid precursor. The reservoirs 62 are connected, in particular by means of mass flow regulators, to a control panel 64 adapted to produce a gas mixture, containing precursor gases and possibly at least one neutral gas, which depends on the treatment to be carried out. The control panel 64 is connected to the enclosure 52 by one or more valves 66. As
    B15377 example, a single valve 66 is shown in Figure 2, which when open, allows the introduction of the gas mixture into the enclosure 52 by first and second supply circuits 68 and 70. As alternatively, certain gases or liquids in the vapor phase can optionally be regulated and introduced into the chamber independently of a mixer. Each supply circuit 68, 70 comprises at least two tubular conduits 72 and 74, for example extending substantially vertically in the enclosure 52, the conduits 72, 74 of the first supply circuit 68 being arranged on either side another of a first set of successive trays 58, for example located from mid-height to the top of the support 54, and the conduits 72, 74 of the second supply circuit 70 being arranged on either side of a second set of successive trays 58, for example located from the base to halfway up the support 54.
    Each pipe 72, 74 comprises openings 76 for the introduction of the gaseous mixture into the enclosure 52. As a variant, each opening 76, or at least some of them, can be replaced by a nozzle. Each opening 76 may correspond to a hole formed in the pipe 72, 74 by a drilling tool of circular cross section. The diameter of the opening 76 is then called the apparent diameter of the opening 76 when viewed from the front, that is to say the diameter of the drilling tool used to form the opening 76. In the case where the opening 76 does not correspond, in front view, to a disc, the diameter of the opening 76 is called the diameter of the disc with the same area as the apparent surface of the opening in front view.
    The number of openings 7 6 per pipe 72, 74, the arrangement of the openings 76 and the dimensions of the openings 76 are determined in particular so that, in operation, the composition of the gas mixture in the enclosure 52 is substantially homogeneous both according to vertical direction and in any horizontal plane. According to one embodiment, all of the pipes 72, 74 include as many openings 76 as the maximum number of trays 58 that can be introduced into the enclosure.
    B15377
    52. The openings / nozzles 76 can be arranged on the conduits 72, 74 at the level of the plates 58 placed in the enclosure 52, each opening 76 being situated opposite the lateral edge of one of the plates 58 or the space located above one of the plates 58. According to one embodiment, for each circuit 68, 70, the openings 76 provided on the pipe 72 are offset in the vertical direction relative to the openings 76 provided on the pipe 74. For each pair of adjacent first and second trays 58, an opening 76 is located on the pipe 72 substantially opposite the lateral edge of the first tray 58 or of the space located above the first tray 58 while there is no opening 76 at this level on the pipe 74 and an opening 76 is located on the pipe 74 substantially opposite the lateral edge of the second plate 58 or the space located above the second tray 58 when there is no opening re 76 at this level on line 72.
    The device 50 comprises a vacuum pump 80 connected to the enclosure 52 by one or more valves 82. For example, a single valve 82 is shown in Figure 2 which, when open, allows the suction of the gas mixture present in the enclosure 52 by a suction nozzle 84. According to one embodiment, the suction nozzle 84 is located at the base of the enclosure 52 and the connections between the supply circuits 68 and 70 and the enclosure 52 are located at the top of the enclosure 52. As a variant, the suction nozzle 84 can be located at the top of the enclosure 52 and the connections between the supply circuits 68 and 70 and l enclosure 52 can be located at the base of enclosure 52.
    The device 50 further comprises at least heating elements 85 surrounding the enclosure 52, for example electrical resistances, making it possible to control the temperature of the plates 58 and of the gas mixture in the enclosure 52. According to one embodiment, the elements 85 heaters can be controlled independently of each other.
    B15377
    The device 50 further comprises first and second generators 86, 88 of an alternating voltage. The first generator 86 is electrically connected to the trays 58 of the first stack when these are placed in the enclosure 52 and the second generator 88 is electrically connected to the trays 58 of the second stack when these are placed in the enclosure 52.
    According to one embodiment, the openings 76 closest to the end of the enclosure 52 opposite the end of the enclosure 52 closest to the extraction nozzle 84 may be larger than the others openings. These openings are called main openings for injecting the gas mixture into the enclosure 52 while the other openings 76 are called secondary openings. According to one embodiment, the openings 76 or only the secondary openings are adapted to inject the gaseous mixture into the enclosure according to a flow defined by a speed vector having a radial component and a tangential component relative to the axis of the pregnant 52.
    FIG. 3 represents an embodiment of the secondary openings 76 in which the diameter of the secondary openings 76 is not identical. The diameter of the secondary openings 76 for each pipe 72, 74 can increase from one end to the other of the pipe. When the arrival of the gaseous mixture in each line 72, 74 takes place through the upper end of the line 72, 74, the diameter of the openings 76 for each line 72, 74 can increase from top to bottom or decrease from top to the bottom. According to one embodiment, the increase in diameter between the opening closest to one end of the pipe 72 or 74 and the opening closest to the opposite end of the pipe 72 or 74 is 100% .
    The operation of the device 50 will now be described in the case of a PECVD method.
    The support 54 is mounted by assembling the plates 58 and the spacers 59. The support 54 can be used for
    B15377 several successive deposit operations. A maintenance operation of the support 54 can be provided after several deposition operations and includes the dismantling of the support 54 and the cleaning of the plates 58.
    The semiconductor substrates 60 are placed on the plates 58. According to one embodiment, the positioning of the substrates 60 on the plates 58 is carried out using a gripper, for example a Bernoulli effect gripper. The dimensions of the gripper are adapted so as to allow the insertion of the gripper provided with a substrate 60 or several substrates 60 in the space present between two adjacent plates 58.
    The support 54 loaded with the semiconductor substrates 60 is then introduced into the enclosure 52.
    In operation, the gas mixture is introduced into the enclosure 52 through each opening 76 of the conduits 72 and 74 of each supply circuit 68, 70. Each plate 58 acts as a thermal conductor and of radiofrequency contact element with the semiconductor substrate 60 or the semiconductor substrates which rest thereon. The plates 58 of the first stack are connected to the first generator 86 so as to form an alternation of cathodes and anodes and a plasma is generated between each pair of adjacent plates 58 of the first stack. The plates 58 of the second stack are connected to the second generator 88 so as to form an alternation of cathodes and anodes and a plasma is generated between each pair of adjacent plates 58 of the second stack. The frequency of the plasma controlled by each generator 86, 88 may be different or identical. For example, the frequency of the plasma controlled by each generator 86, 88 is between 40 kHz and 2.45 GHz, for example of the order of 50 KHz. According to one embodiment, each generator 86, 88 applies the alternating voltage to the associated plates 58 in a pulsed manner, that is to say by periodically alternating a phase t on of application of the alternating voltage and a phase t o ff lack of application of the
    B15377 alternating voltage. The pulse period can vary between 10 ms and 100 ms. The cyclic ratio of the pulsations, that is to say the ratio between the duration of the phase t on and the period of the pulsations can be approximately 10%. According to one embodiment, a phase t on of the generator 86 takes place during a phase t o ff of the generator 88 and a phase t on of the generator 88 takes place during a phase t o ff of the generator 86. This operating mode makes it possible to maintain a sufficient gas distribution to supply the two stacked trays.
    The heating elements 85 can be controlled to obtain a uniform temperature in the enclosure 82 or to obtain a temperature gradient in the enclosure 52, for example in the vertical direction. Depending on the treatment carried out, the temperature in the enclosure 52 can be regulated between 200 ° C and 600 ° C.
    According to one embodiment, each substrate 60 is a monocrystalline or polycrystalline silicon substrate and the device 50 is used for depositing a thin layer, for example an electrically insulating layer, on the upper face of each substrate 60. alternatively, the processing device can be used to carry out etching operations on semiconductor substrates, in particular plasma etching operations. The insulating layer can be a layer of silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x Ny), silicon carbide (SiC), silicon carbonitride ( SiCN), aluminum oxide (A1O X ), boron silicate glass, phosphorus silicate glass, or amorphous silicon doped with boron or phosphorus or intrinsic. The gases introduced into the enclosure 52 can be chosen from the group comprising silane (SiHg), ammonia (NH3), trimethylaluminum (TMA), nitrous oxide (N2O), nitrogen trifluoride (NF3 ), methane (CHg), boron trichloride (BCI3), dioxygen (03), nitrogen (N2), argon (Ar), diborane (B2H5), and phosphane (PH3). The thickness of the layer
    B15377 deposited can be between 10 nm and 100 nm, for example of the order of 40 nm.
    The vacuum pump 80 is started so as to maintain a pressure in the enclosure 52 between 67 Pa (approximately 0.5 Torr) and 667 Pa (approximately 5 Torr). According to one embodiment, the vacuum pump 80 can operate continuously. An isolation valve, provided between the vacuum pump 80 and the nozzle 84, makes it possible to interrupt the suction carried out by the vacuum pump and a regulation valve, provided between the vacuum pump 80 and the nozzle 84, allows to control the pressure in the enclosure 52 according to the pumping rate.
    The precursor gases will decompose to form a deposit of a thin layer substantially only on the upper face of the substrates 60.
    At the end of the treatment, the support 54 is removed from the enclosure 52 and the treated substrates 60 are removed from each tray 58.
    The substrates 60 being arranged substantially horizontally in the enclosure 52, this makes it possible to reduce the mechanical stresses present in the substrates 60 during the treatment with respect to the treatment device 10 in which the substrates 16 are arranged in a substantially vertical manner. In addition, the substrates 60 being placed on the plates 58, there are no elements of the plates 58 which partially cover the upper surface of each substrate 60. As a result, the entire upper surface of each substrate 60 is exposed to the gaseous mixture introduced into the enclosure 52. The deposition of a layer of substantially uniform thickness can then be carried out over the entire upper surface of each substrate 60.
    The fact of providing several openings 76 distributed in the vertical direction makes it possible to increase the homogeneity of the composition of the gas mixture in the enclosure 52 in the vertical direction.
    B15377
    The fact of providing openings 76 on either side of the substrates 60 makes it possible to increase the homogeneity of the composition of the gas mixture in the enclosure 52 in the horizontal direction. The number of openings 76 per pipe 72, 74, the arrangement of the openings 76 and the dimensions of the openings 76 are determined in particular so that, in operation, the composition of the gas mixture in the enclosure 52 is substantially homogeneous in the vertical direction .
    Advantageously, the distance between two adjacent plates 58 of the support 54 is substantially constant. The design of the support 54 is then simplified and the positioning of the semiconductor substrates 60 on the plates 58, for example in an automated manner, is also simplified.
    Figures 4A, 4B and 4C show an embodiment of a plate 58. Figure 4C is a detail view of Figure 4B indicated by a circle D4C in Figure 4B.
    In the present embodiment, the plate 58 comprises a substantially planar upper face 100 on which are provided slots 102 for the installation of four substrates 60 not shown in FIGS. 4A to 4C.
    Edges 104 slightly projecting from the face 100 may be provided along two opposite lateral edges of the plate 58. The height of each ledge 104 relative to the face 100 is between 0.1 mm and 1 mm, by example of the order of 0.5 mm.
    For each location 102, the plate 58 comprises several studs 106, for example three studs 106, which project in relation to the face 100, over a height for example of between 0.1 mm and 1 mm, for example of 0.5 mm. Each stud 106 has a plane top 108 parallel to the face 100. Each substrate 60 rests on the tips 108 of three studs 106. Each stud 106 may have a cross section corresponding to a circular segment whose surface is slightly greater than half of 'a disk. For each
    B15377 location 102, the three studs 106 can be distributed at the vertices of an equilateral triangle.
    The present embodiment advantageously allows the gripping of each substrate 60 by a Bernoulli effect gripper. A Bernoulli effect gripper includes a head which projects compressed air escaping at high speed radially between the head and the substrate 60. A vacuum is then created between the gripper head and the substrate 60. Stop elements maintain the substrate 60 at a distance in order to allow the evacuation of the air. By generating a vacuum according to the Bernoulli principle, it is possible to move the substrate 60 almost without contact. The studs 106 maintain a gas film between the upper face 100 and the substrate 60, which is favorable for the proper functioning of a Bernoulli effect gripper, in particular when the substrate 60 is removed from the plate 58 and avoids the risk of adhesion of the substrate 60 on the face 100 which could result from a too large direct surface contact between the underside of the substrate 60 and the face 100. However, the thickness of the gas film between the substrate 60 and the plate 58 is low enough to reduce exchanges with the gas mixture introduced into the enclosure 52 during the treatment. This makes it possible to reduce, or even avoid, the formation of a deposit on a part of the lower face of each semiconductor substrate 60 oriented towards the side of the plate 58, which is not desirable in particular in the case where a treatment of each face of the substrate 60 is provided.
    Figures 5A, 5B, 5C and 5D show another embodiment of a plate 58. Figure 5D is a detail view of Figure 5C indicated by a circle D5D in Figure 5C.
    The plate 58 represented in FIGS. 5A to 5D comprises all of the elements of the plate represented in FIGS. 4A to 4C with the difference that the studs 106 are not present and that the plate 58 represented in FIGS. 5A to 5D comprises, in addition to the flanges 104, two flanges 110 slightly protruding from the face 100 along the two other lateral edges
    B15377 opposite of the plate 58. The edges 104 and 110 are not contiguous and delimit passages 112 at the four corners of the plate 58.
    The plate 58 shown in FIGS. 5A to 5D further comprises ribs 114 which project in relation to the face 100, over a height for example between 0.15 mm and 1 mm, for example from the 0.25 mm. The ribs 114 are rectilinear and delimit the locations 102. In the embodiment shown in FIGS. 5A to 5D, the plate 58 comprises four locations 102 and four ribs 114 arranged along the branches of a cross, two ribs 114 being aligned along a first direction and the two other ribs 114 being aligned in a second direction perpendicular to the first direction. The ribs 114 are not joined together or with the flanges 104 and 110 so that they delimit passages 116 between them and passages 118 with the flanges 104 and 110. The length of each rib 114 can be between 5% and 95% of half the distance between two opposite edges 104 or 110. In the embodiment shown in FIGS. 5A to 5D, the length of each rib 114 is of the order of 90% of half the distance separating two opposite flanges 104 or 110. However, the length of the ribs 114 may be less than what is shown in FIGS. 5A to 5D. Alternatively, each rib 114 can be divided into at least two non-contiguous and aligned sub-ribs.
    In operation, each substrate 60 rests on the portion of the face 100 of one of the locations 102 and the lateral movement of the substrate 60 in a horizontal plane is blocked by the ribs 114 and the flanges 104 and 110. The ribs 114 and the flanges 104 and 110 of this embodiment make it possible to avoid sliding in a horizontal direction of the substrate 60 on the plate 58 when the substrate 60 is placed on the plate 60. The passages 112, 116, 118 allow the circulation of favorable gas the proper functioning of a Bernoulli effect gripper.
    B15377
    FIGS. 6A, 6B, 6C, 6D, 6E and 6F represent another embodiment of a plate 58. FIG. 6D is a detail view of FIG. 6C indicated by a circle D6D in FIG. 6C and FIG. 6F is a detail view of FIG. 6E indicated by a circle D6F in FIG. 6E.
    The plate 58 shown in FIGS. 6A to 6F comprises all of the elements of the plate shown in FIGS. 4A to 4C with the difference that it includes, for each location 102, a recess 120 which recesses in the face 100. Each recess 120 has a substantially planar bottom. The depth of each recess 120 relative to the tops of the flanges 104 is between 0.5 mm and 2 mm, for example of the order of 1 mm. The pads 106 project from the bottom of each recess 120. The plate 58 comprises, for each recess 120 of the channels 122 for the circulation of gas, three channels 122 being shown for each recess 120 in Figures 6A and 6B. Each channel 122 opens at one end to the bottom of the recess 120 and opens at the opposite end to one of the lateral flanks of the plate 58.
    The plate shown in FIGS. 6A to 6F further comprises ribs 124 which project in relation to the face 100, over a height for example between 0.15 mm and 1 mm, for example of the order of 0.5 mm. The ribs 124 are rectilinear and delimit the locations 102. In the embodiment shown in FIGS. 6A to 6F, the plate 58 comprises four locations 102 and four ribs 124 arranged along the branches of a cross, two ribs 124 being aligned along a first direction and the two other ribs 124 being aligned in a second direction perpendicular to the first direction. The ribs 124 are joined together and with the flanges 104 and 110.
    In operation, for each location 102, the substrate 60 rests on the portion of the face 100 of one of the locations 102 surrounding the recess 120 and on the pads 106.
    The lateral displacement of the substrate 60 in a horizontal plane is
    B15377 blocked by the ribs 124 and the flanges 104 and 110. The ribs 124 and the flanges 104 and 110 of the present embodiment make it possible to avoid sliding in a horizontal direction of the substrate 60 on the plate 58 when the substrate 60 is placed on the plate 58. The channels 120 allow the free circulation of gas under the substrate 60, which is favorable for the proper functioning of a Bernoulli effect gripper, in particular when the substrate 60 is removed from the plate 58 and avoids the risk of adhesion of the substrate 60 on the face 100 which could result from a direct contact of too large a surface between the lower face of the substrate 60 and the face 100, as may be the case with the plate 58 shown in FIGS. 5A to 5D.
    In addition, when the substrate 60 is in place on a location 102, the volume of the recess 120 communicates with the gas mixture present in the enclosure 52 only through the channels 122. This reduces the circulation of the gas mixture in the recess 120 during the treatment of the substrate 60 and reduces the risks of undesirable deposition on the underside of the substrate 60.
    FIGS. 7A, 7B, 7C, 7D, 7E and 7F represent another embodiment of a plate 58. FIG. 7D is a detail view of FIG. 7C indicated by a circle D7D in FIG. 7C and FIG. 7F is a detail view of FIG. 7E indicated by a circle D7F in FIG. 7E.
    In the present embodiment, the plate 58 comprises a substantially planar upper face 130 on which are provided slots 132 for the installation of four substrates 60 not shown in FIGS. 7A to 7F. The plate 58 shown in FIGS. 7A to 7 F further comprises first parallel grooves 134 which extend deep into the plate 58 from the face 130 and which extend parallel to a first direction and second grooves 136 parallels which extend deep into the plate 58 from the face 130 and which extend parallel to a second direction, preferably perpendicular to the first direction. The grooves 134 and 136 are distributed in a grid and
    B15377 divide face 102 into disjoint portions 138. By way of example, each groove 134, 136 has a depth of between 0.5 mm and 3 mm, for example of the order of 1 mm and a width of between 0.5 mm and 3 mm, for example of '' order of 2 mm. The repetition pitch of the grooves 134 or 136 can be between 5 mm and 40 mm, for example of the order of 10 mm.
    In operation, for each location 102, the substrate 60 rests on the portions 138 of the face 130 associated with the corresponding location 132. The grooves 134 and 136 allow the free circulation of gas under the substrate 60, which is favorable for the proper functioning of a Bernoulli effect gripper, in particular when the substrate 60 is removed from the plate 58 and avoids the risk of adhesion of the substrate. 60 on the face 130 which could result from too large a surface contact between the rear face of the substrate 60 and the face 130, as may be the case with the plate 58 shown in FIGS. 5A to 5D. In addition, when the substrate 60 is in place at a location 132, the volume of gas sandwiched between the substrate 60 and the plate 58 communicates with the outside only through the ends of the grooves 134, 136. This reduces the circulation of the gas mixture present in the enclosure 52 during the treatment of the substrate 60 and reduces the risks of undesirable deposits on the rear face of the substrate 60.
    Particular embodiments have been described. Various variants and modifications will appear to those skilled in the art. In particular, although examples of treatment for depositing thin layers have been described, the treatment device can be used to carry out operations for etching semiconductor substrates, in particular operations for plasma etching.
    B15377
    权利要求:
    Claims (14)
    [1" id="c-fr-0001]
    1. A device (50) for treating semiconductor substrates (60), the device comprising an enclosure (52) and at least one circuit (68, 70) for supplying a gaseous mixture into the enclosure, the enclosure containing at least one support (54), the support comprising a stack of plates (58) on which the semiconductor substrates rest, each plate having a substantially horizontal face (102; 108; 130) on which rests at least one of the semiconductor substrates , in which at least one of the plates comprises at least one passage (112, 116; 120, 122; 134, 136) for the gas mixture between the substrate and the plate.
    [2" id="c-fr-0002]
    2. Device according to claim 1, in which said plate (58) comprises first parallel grooves (134) extending in the plate from said face (132) and second parallel grooves (136) extending in the plate from said face (132) and inclined relative to the first grooves.
    [3" id="c-fr-0003]
    3. Device according to claim 1, wherein said plate (58) comprises studs (106) projecting relative to said face (102) on which the semiconductor substrate (60) rests.
    [4" id="c-fr-0004]
    4. Device according to claim 1, in which at least two semiconductor substrates (60) rest on said plate (58), the face (100) of said plate comprising locations (102) on which the substrates and a rib (114) rest. projecting from the face and at least partially separating the two locations.
    [5" id="c-fr-0005]
    5. Device according to claim 3 or 4, wherein the face (102) of said plate (58) comprises a recess (120) under the substrate (60) and a channel (122) open only at its ends connecting the recess to one of the side edges of said tray.
    [6" id="c-fr-0006]
    6. Device according to any one of claims 1 to 5, comprising a circuit (68) for supplying the gaseous mixture into
    B15377 the enclosure (52), the circuit comprising at least two pipes (72, 74) arranged in the enclosure on either side of the support (54), each pipe comprising openings (76) for supplying the gas mixture in the enclosure.
    [7" id="c-fr-0007]
    7. Device according to claim 6, wherein the pipes (72, 74) extend vertically.
    [8" id="c-fr-0008]
    8. Device according to claim 6 or 7, wherein the diameters of the openings (76) of each pipe (72, 74) increase from one end to the other of the pipe.
    [9" id="c-fr-0009]
    9. Device according to any one of claims 6 to 8, wherein the openings (76) of one of the pipes (72) are offset in the vertical direction relative to the openings (76) of the other pipe (74 ).
    [10" id="c-fr-0010]
    10. Device according to any one of claims 6 to 9, in which the stack comprises a succession of N plates, the openings (76) of one of the conduits (72) being located at the level of the plates of even rank and the openings (76) of the other pipe (72) being located at the level of the plates of odd rank.
    [11" id="c-fr-0011]
    11. Device according to any one of claims 6 to 10, in which the plates (58) are distributed in successive first plates (58) and in successive second plates (58), the device further comprising a first circuit (68) supplying the gaseous mixture into the enclosure and a second circuit (70) supplying the gaseous mixture into the enclosure, the first circuit comprising at least two first pipes (72, 74) arranged in the enclosure on the one hand and on the other of the first plates and the second circuit comprising at least two second conduits (72, 74) arranged in the enclosure on either side of the second plates, each first and second conduit comprising openings (76) for the supply of the gaseous mixture into the enclosure.
    [12" id="c-fr-0012]
    12. Device according to claim 11, comprising a first generator (86) of a first alternating voltage connected to the first plates (58) and a second generator (88) of a second alternating voltage connected to the second plates.
    B15377
    [13" id="c-fr-0013]
    13. Device according to any one of claims 1 to 12, comprising a vacuum pump (80) connected to the enclosure (52).
    [14" id="c-fr-0014]
    14. Device according to any one of claims 1 to 13, for the treatment of semiconductor substrates (60)
    5 intended for the manufacture of photovoltaic cells.
    B15377
    1/12
    B15377
    2/12
    106
    102
    102
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    WO2018042120A1|2018-03-08|
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    FR3055468B1|2018-11-16|
    TW201812845A|2018-04-01|
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    法律状态:
    2017-08-08| PLFP| Fee payment|Year of fee payment: 2 |
    2018-03-02| PLSC| Search report ready|Effective date: 20180302 |
    2018-08-16| PLFP| Fee payment|Year of fee payment: 3 |
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    2021-07-09| CA| Change of address|Effective date: 20210531 |
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    2021-09-17| TP| Transmission of property|Owner name: ECM GREENTECH, FR Effective date: 20210809 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1658054A|FR3055468B1|2016-08-30|2016-08-30|DEVICE FOR PROCESSING PARTS|FR1658054A| FR3055468B1|2016-08-30|2016-08-30|DEVICE FOR PROCESSING PARTS|
    TW106129253A| TWI744378B|2016-08-30|2017-08-29|Piece treatment device|
    EP17764889.6A| EP3507838A1|2016-08-30|2017-08-29|Device for treating parts|
    CN201780053303.1A| CN109891606A|2016-08-30|2017-08-29|Device for processing component|
    PCT/FR2017/052298| WO2018042120A1|2016-08-30|2017-08-29|Device for treating parts|
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